|Title||Doping characterization of InAsGaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy|
|Publication Type||Journal Article|
|Year of Publication||2008|
|Authors||ZY Zhao, WM Zhang, C Yi, AD Stiff-Roberts, BJ Rodriguez, and AP Baddorf|
|Journal||Applied Physics Letters|
In order to better understand dopant incorporation in quantum dot infrared photodetectors, the application of cross-sectional scanning capacitance microscopy (SCM) has been used to investigate carrier occupation/distribution in a multilayer InAsGaAs quantum dot (QD) heterostructure for different doping techniques. The doping schemes in the QD structure include direct doping (in InAs QD layers) and remote doping (in GaAs barrier layers), each with different doping concentrations. The SCM image suggests that large band bending occurs due to highly doped, remote-doping layers, thereby causing electron redistribution in direct-doping layers. The experimental result is supported by a band structure calculation using the Schrödinger-Poisson method by NEXTNANO3. © 2008 American Institute of Physics.
|Short Title||Applied Physics Letters|