Doping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy

TitleDoping characterization of InAs/GaAs quantum dot heterostructure by cross-sectional scanning capacitance microscopy
Publication TypeJournal Article
Year of Publication2007
AuthorsZY Zhao, WM Zhang, C Yi, AD Stiff-Roberts, BJ Rodriguez, and AP Baddorf
JournalConference Proceedings Lasers and Electro Optics Society Annual Meeting Leos
Start Page32
Pagination32 - 33
Date Published12/2007
Abstract

Cross-section of multi-layer InAs/GaAs quantum dot heterostructure has been characterized using scanning capacitance microscopy to investigate dopant incorporation into quantum dots. Simulation of the corresponding band structure is used to better understand the experimental results. ©2007 IEEE.

DOI10.1109/LEOS.2007.4382260
Short TitleConference Proceedings Lasers and Electro Optics Society Annual Meeting Leos