|Title||Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study|
|Publication Type||Journal Article|
|Year of Publication||2007|
|Authors||Z Zhao, KR Lantz, C Yi, and AD Stiff-Roberts|
|Journal||Optics Infobase Conference Papers|
Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated. © 2007 Optical Society of America.
|Short Title||Optics Infobase Conference Papers|