Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study

TitleDoping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study
Publication TypeJournal Article
Year of Publication2007
AuthorsZ Zhao, KR Lantz, C Yi, and AD Stiff-Roberts
JournalOptics Infobase Conference Papers
Pagination -
Date Published01/2007
Abstract

Impurity centers induced by dopants in InAs/GaAs quantum-dot systems affect energy level occupation and carrier transport in multi-layer QDIPs. In order to better understand doping effects and to optimize device performance, capacitance-voltage spectra are investigated. © 2007 Optical Society of America.

Short TitleOptics Infobase Conference Papers