Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors

TitleHeterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors
Publication TypeJournal Article
Year of Publication2004
AuthorsS Chakrabarti, AD Stiff-Roberts, P Bhattacharya, and SW Kennerly
JournalJournal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society
Volume22
Issue3
Start Page1499
Pagination1499 - 1502
Date Published05/2004
Abstract

The fabrication of two different quantum dot infrared photodetectors (QDIP) for achieving large responsivity in InAs/GaAs QDIP at higher operating temperature was reported. A distinct increase in the responsivity was measured at a very high operating temperature in the case of the first heterostructure which was a device with 70 quantum dot layers. The second device had ten layers of InAs quantum dots embedded in an AlAs/GaAs superlattice in order to take advantage of the resulting increased quantum dot intensity. Subsequent large dot density and increased carrier confinement resulted in extremely high responsivity of 2.5 A/W and high conversion efficiency of 70% in multiwafer infrared QDIPs at a temperature of 78 K.

Short TitleJournal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society