|Title||Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors|
|Publication Type||Journal Article|
|Year of Publication||2004|
|Authors||S Chakrabarti, AD Stiff-Roberts, P Bhattacharya, and SW Kennerly|
|Journal||Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society|
|Pagination||1499 - 1502|
The fabrication of two different quantum dot infrared photodetectors (QDIP) for achieving large responsivity in InAs/GaAs QDIP at higher operating temperature was reported. A distinct increase in the responsivity was measured at a very high operating temperature in the case of the first heterostructure which was a device with 70 quantum dot layers. The second device had ten layers of InAs quantum dots embedded in an AlAs/GaAs superlattice in order to take advantage of the resulting increased quantum dot intensity. Subsequent large dot density and increased carrier confinement resulted in extremely high responsivity of 2.5 A/W and high conversion efficiency of 70% in multiwafer infrared QDIPs at a temperature of 78 K.
|Short Title||Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society|