|Title||High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector|
|Publication Type||Journal Article|
|Year of Publication||2003|
|Authors||AD Stiff-Roberts, S Chakrabarti, S Kennerly, and P Bhattacharya|
|Journal||Osa Trends in Optics and Photonics Series|
|Pagination||464 - 466|
The material characteristics of 70-layer quandom dot infrared photodetector (QDIP) was investigated using transmission electron microscopy and photoluminescence measurements. QDIP comprises of InAs/GaAs quantum dots, which offers nornal incidence, low dark current, high temperature, multi-wavelength detection useful for environmental monitoring, medical diagnosis and space science. It improves reponsivity and conversion efficiency and can also be used for polarization sensitive detection. The influence of the background can be eliminated by considering both in-plane polarized and perpendicularly polarized detection.
|Short Title||Osa Trends in Optics and Photonics Series|