High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector

TitleHigh responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector
Publication TypeJournal Article
Year of Publication2003
AuthorsAD Stiff-Roberts, S Chakrabarti, S Kennerly, and P Bhattacharya
JournalOsa Trends in Optics and Photonics Series
Volume88
Start Page464
Pagination464 - 466
Date Published01/2003
Abstract

The material characteristics of 70-layer quandom dot infrared photodetector (QDIP) was investigated using transmission electron microscopy and photoluminescence measurements. QDIP comprises of InAs/GaAs quantum dots, which offers nornal incidence, low dark current, high temperature, multi-wavelength detection useful for environmental monitoring, medical diagnosis and space science. It improves reponsivity and conversion efficiency and can also be used for polarization sensitive detection. The influence of the background can be eliminated by considering both in-plane polarized and perpendicularly polarized detection.

Short TitleOsa Trends in Optics and Photonics Series