High-temperature operation of mid-infrared (λ=4-5 μm) vertical and lateral InAs/GaAs/AlGaAs quantum dot infrared photodetectors

TitleHigh-temperature operation of mid-infrared (λ=4-5 μm) vertical and lateral InAs/GaAs/AlGaAs quantum dot infrared photodetectors
Publication TypeJournal Article
Year of Publication2001
AuthorsAD Stiff, S Krishna, P Bhattacharya, and S Kennerly
JournalAnnual Device Research Conference Digest
Start Page155
Pagination155 - 156
Date Published01/2001
Abstract

State-of-the-art results on vertical and lateral mid-infrared intersubband quantum dot infrared photodetectors (QDIP) was presented. The vertical detectors exhibited lowest dark currents for such devices and also had one of the highest operating temperatures. Vertical QDIP (VQDIP) operating by means of vertical transport of carriers through directly doped quantum dot layers were grown and fabricated with symmetric and asymmetric barriers made of semiconducting gallium compound. The barriers impede the collection of free carriers between the contacts reducing the dark currents.

Short TitleAnnual Device Research Conference Digest