|Title||High-temperature operation of mid-infrared (λ=4-5 μm) vertical and lateral InAs/GaAs/AlGaAs quantum dot infrared photodetectors|
|Publication Type||Journal Article|
|Year of Publication||2001|
|Authors||AD Stiff, S Krishna, P Bhattacharya, and S Kennerly|
|Journal||Annual Device Research Conference Digest|
|Pagination||155 - 156|
State-of-the-art results on vertical and lateral mid-infrared intersubband quantum dot infrared photodetectors (QDIP) was presented. The vertical detectors exhibited lowest dark currents for such devices and also had one of the highest operating temperatures. Vertical QDIP (VQDIP) operating by means of vertical transport of carriers through directly doped quantum dot layers were grown and fabricated with symmetric and asymmetric barriers made of semiconducting gallium compound. The barriers impede the collection of free carriers between the contacts reducing the dark currents.
|Short Title||Annual Device Research Conference Digest|