Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector

TitleNormal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector
Publication TypeJournal Article
Year of Publication2001
AuthorsAD Stiff, S Krishna, P Bhattacharya, and SW Kennerly
JournalIeee Journal of Quantum Electronics
Volume37
Issue11
Start Page1412
Pagination1412 - 1419
Date Published11/2001
Abstract

The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs - GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity 3 × 109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.

DOI10.1109/3.958360
Short TitleIeee Journal of Quantum Electronics