|Title||Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector|
|Publication Type||Journal Article|
|Year of Publication||2001|
|Authors||AD Stiff, S Krishna, P Bhattacharya, and SW Kennerly|
|Journal||Ieee Journal of Quantum Electronics|
|Pagination||1412 - 1419|
The growth, fabrication, and characterization of a normal-incidence, high-temperature, mid-wavelength infrared, InAs - GaAs vertical quantum-dot infrared photodetector with a single Al0.3Ga0.7As current-blocking barrier are described and discussed in detail. A specific detectivity 3 × 109 cmHz1/2/W is measured for a detector temperature of 100 K at a bias of 0.2 V. Detector characteristics are measured for temperatures as high as 150 K. The superior low bias performance of the vertical quantum-dot infrared photodetector ensures its compatibility with commercially available silicon read-out circuits necessary for the fabrication of a focal plane array.
|Short Title||Ieee Journal of Quantum Electronics|