Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors

TitleStrain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors
Publication TypeJournal Article
Year of Publication2002
AuthorsK Stewart, M Buda, J Wong-Leung, L Fu, C Jagadish, A Stiff-Roberts, and P Bhattacharya
JournalConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad
Volume2002-January
Start Page475
Pagination475 - 478
Date Published01/2002
Abstract

© 2002 IEEE. In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900°C for 60s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.

DOI10.1109/COMMAD.2002.1237293
Short TitleConference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad