|Title||Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers|
|Publication Type||Journal Article|
|Year of Publication||2003|
|Authors||AD Stiff-Roberts, S Chakrabarti, P Bhattacharya, and S Kennerly|
|Journal||Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos|
|Pagination||925 - 926|
Quantum dot infrared photodetectors (QDIPs) offer normal-incidence sensitivity, low dark current, high-temperature operation, and multi-wavelength detection. In general, the advantages of these intersubband devices are the result of three-dimensional quantum dot (QD) electron confinement. It is found that the use of AlAs/Gaas SL barrier in an InAs QDIP heterostructure has led to significant gains in the control of detector performance, particularly in terms of obtaining high responsivity from these devices.
|Short Title||Conference Proceedings Lasers and Electro Optics Society Annual Meeting Leos|