Tailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers

TitleTailoring of quantum dot infrared photodetector performance with AlAs/GaAs superlattice barriers
Publication TypeJournal Article
Year of Publication2003
AuthorsAD Stiff-Roberts, S Chakrabarti, P Bhattacharya, and S Kennerly
JournalConference Proceedings Lasers and Electro Optics Society Annual Meeting Leos
Volume2
Start Page925
Pagination925 - 926
Date Published12/2003
Abstract

Quantum dot infrared photodetectors (QDIPs) offer normal-incidence sensitivity, low dark current, high-temperature operation, and multi-wavelength detection. In general, the advantages of these intersubband devices are the result of three-dimensional quantum dot (QD) electron confinement. It is found that the use of AlAs/Gaas SL barrier in an InAs QDIP heterostructure has led to significant gains in the control of detector performance, particularly in terms of obtaining high responsivity from these devices.

Short TitleConference Proceedings Lasers and Electro Optics Society Annual Meeting Leos