Publications
Doping effect on carrier occupation and transport in InAs/GaAs quantum dot infrared photodetectors: A capacitance-voltage spectroscopy study." Optics Infobase Conference Papers (2007): - .
"DX -like centers in InAsGaAs QDIPs observed by polarization-dependent Fourier transform infrared spectroscopy." Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society 25, no. 3 (2007): 1108-1112.
"Effect of donor-complex-defect-induced dipole field on InAs/GaAs quantum dot infrared photodetector activation energy." Applied Physics Letters 90, no. 23 (2007): 233511.
"Fourier transform infrared absorbance and photoluminescence spectroscopy studies of CdSe colloidal quantum dot/conducting polymer nanocomposites for application to infrared photodetectors." Materials Research Society Symposium Proceedings 1015 (2007): 113-118.
"Hybrid nanomaterials for multi-spectral infrared photodetection." International Journal of High Speed Electronics and Systems 17, no. 1 (2007): 165-172.
"Probing dopant incorporation in InAs/GaAs QDIPs by polarization-dependent Fourier transform infrared spectroscopy." Infrared Physics & Technology 51, no. 2 (2007): 131-135.
"Spin-cast Deposition of CdSe-CdS Core-shell Colloidal Quantum Dots on Doped GaAs Substrates: Structural and Optical Characterization." Ieee Transactions on Nanotechnology 6 (2007): 413-420.
"Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current." Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006 (2006): - .
"Mid-infrared quantum dot photodetectors." Springer Series in Optical Sciences 118 (2006): 487-513.
"Optical characterization of CdSe colloidal quantum dot/ MEH-PPV polymer nanocomposites spin-cast on GaAs substrates." Materials Research Society Symposium Proceedings 939 (2006): 8-13.
"Quantum dots in semiconductor optoelectronic devices." Electrochemical Society Interface 15, no. 4 (2006): 23-27.
"High-performance mid-infrared quantum dot infrared photodetectors." Journal of Physics D: Applied Physics 38, no. 13 (2005): 2135-2141.
"Research propels quantum dots forward." Laser Focus World 41, no. 5 (2005): 103-108.
"Ultrafast electronic dynamics in unipolar n-doped InAs/GaAs quantum dot structures." Optics Infobase Conference Papers (2005): 551-553.
"Contribution of Field-Assisted Tunneling Emission to Dark Current in InAs-GaAs Quantum Dot Infrared Photodetectors." Ieee Photonics Technology Letters 16, no. 3 (2004): 867-869.
"Heterostructures for achieving large responsivity in InAs/GaAs quantum dot infrared photodetectors." Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society 22, no. 3 (2004): 1499-1502.
"High responsivity AIAs/InAs/GaAs superlattice quantum dot infrared photodetector." Electronics Letters 40, no. 3 (2004): 197-198.
"High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity." Ieee Photonics Technology Letters 16, no. 5 (2004): 1361-1363.
"Quantum dot infrared photodetector design based on double-barrier resonant tunnelling." Electronics Letters 40, no. 17 (2004): 1082-1083.
"Quantum dot opto-electronic devices." Annual Review of Materials Research 34 (2004): 1-40.
"Resonant tunneling quantum dot infrared photodetector (RT-QDIP): Separating dark current and photocurrent." Device Research Conference Conference Digest, Drc (2004): 81-82.
"Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors." Ieee Journal of Quantum Electronics 39, no. 3 (2003): 459-467.
"Carrier dynamics in self-organized in(Ga)As/Ga(Al)as quantum dots and their application to long-wavelength sources and detectors." Institute of Physics Conference Series 174 (2003): 117-124.
"High responsivity, polarization-sensitive, 70-layer InAs/GaAs quantum dot infrared photodetector." Osa Trends in Optics and Photonics Series 88 (2003): 464-466.
"Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector." Journal of Applied Physics 94, no. 8 (2003): 5283-5289.
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