High-detectivity, normal-incidence, mid-infrared (λ∼4μm)inAs/GaAs quantum-dot detector operating at 150 k." Applied Physics Letters 79, no. 3 (2001): 421-423."
High-temperature operation of mid-infrared (λ=4-5 μm) vertical and lateral InAs/GaAs/AlGaAs quantum dot infrared photodetectors." Annual Device Research Conference Digest (2001): 155-156."
Normal-incidence, high-temperature, mid-infrared, inAs-GaAs vertical quantum-dot infrared photodetector." IEEE Journal of Quantum Electronics 37, no. 11 (2001): 1412-1419."
Effects of Emulsion Target on the Nanoscale Morphology and Device Performance of P3HT-PC61BM Photovoltaics Fabricated by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation (RIR-MAPLE)."."
Empirical Growth Mechanisms of Emulsion-based, Resonant Infrared, Matrix-Assisted Pulsed Laser Evaporation."."
Investigation of Different Organic Solar Cell Active Region Structures Deposited by Resonant Infrared Matrix-Assisted Pulsed Laser Evaporation (RIR-MAPLE)."."
Material Properties and Applications of Blended Organic Thin Films with Nanoscale Domains Deposited by RIR-MAPLE (INVITED)."."