Abstract
The characteristics of quantum dot infrared photodetectors (QDIPs) in which InAs self-organised quantum dots are embedded in an AlAs/GaAs superlattice matrix are reported. An extremely large peak responsivity, R p =2.5 A/W, is measured at T= 78K for Vvias = -1.5V A dark current density as low as 3.2 × 10-4 A/cm2 for Vbias= -2.0 V is also measured at T=300K.
DOI
10.1049/el:20040136
Year