Quantum-Dot Infrared Photodetectors

In this chapter, the device physics of quantum-dot infrared photodetectors (QDIPs) is reviewed, including epitaxial growth of quantum-dot (QD)-active regions, intraband transitions in QDs, and infrared photodetector performance parameters. Current QDIP research directions designed to address fundamental challenges in QDIPs, such as dot nonuniformity, are presented, including controlling dopant incorporation, bandgap engineering, and incorporating resonant photonic structures. Finally, the state-of-the-art performance of QDIP focal plane arrays and future research directions (such as organic-based QDIPs) are discussed.