Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current

TitleControl of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current
Publication TypeJournal Article
Year of Publication2006
AuthorsAD Stiff-Roberts, Z Zhao, and C Yi
JournalConference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006
Pagination -
Date Published12/2006
Abstract

To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias. © 2006 Optical Society of America.

DOI10.1109/CLEO.2006.4628283
Short TitleConference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006