|Title||Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current|
|Publication Type||Journal Article|
|Year of Publication||2006|
|Authors||AD Stiff-Roberts, Z Zhao, and C Yi|
|Journal||Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006|
To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias. © 2006 Optical Society of America.
|Short Title||Conference on Lasers and Electro Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006|