Control of dopant incorporation in InAs/GaAs quantum dots for infrared photodetection with low dark current

To reduce dark current in quantum-dot infrared photodetectors, different InAs/GaAs quantum-dot doping conditions, i.e. concentration and modulation- vs. delta-doping, have been investigated by the comparison of temperature-dependent dark current and corresponding activation energies vs. bias. © 2006 Optical Society of America.