Hot dot detectors

TitleHot dot detectors
Publication TypeJournal Article
Year of Publication2002
AuthorsS Krishna, AD Stiff-Roberts, JD Phillips, P Bhattacharya, and SW Kennerly
JournalIeee Circuits and Devices Magazine
Start Page14
Pagination14 - 24
Date Published01/2002

The properties of normal-incidence, high-temperature, mid-wavelength IR, InAs/GaAs vertical QDIPs with and without an Al 0.3Ga 0.7As current-blocking barrier are discussed. These devices demonstrate very high D* values (D* ∼3 × 10 9 cmHz 1/2/W at T = 100 K and V bias = 0.2 V) and high operating temperatures (150 K) for normal-incidence vertical QDIPs. The devices are also unique in that their high performance at low bias demonstrates their suitability for incorporation in an FPA that uses commercially available silicon read-out circuits.

Short TitleIeee Circuits and Devices Magazine