|Title||Hot dot detectors|
|Publication Type||Journal Article|
|Year of Publication||2002|
|Authors||S Krishna, AD Stiff-Roberts, JD Phillips, P Bhattacharya, and SW Kennerly|
|Journal||Ieee Circuits and Devices Magazine|
|Pagination||14 - 24|
The properties of normal-incidence, high-temperature, mid-wavelength IR, InAs/GaAs vertical QDIPs with and without an Al0.3Ga0.7As current-blocking barrier are discussed. These devices demonstrate very high D* values (D* ∼3 × 109cmHz1/2/W at T = 100 K and Vbias= 0.2 V) and high operating temperatures (150 K) for normal-incidence vertical QDIPs. The devices are also unique in that their high performance at low bias demonstrates their suitability for incorporation in an FPA that uses commercially available silicon read-out circuits.
|Short Title||Ieee Circuits and Devices Magazine|