|Title||Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector|
|Publication Type||Journal Article|
|Year of Publication||2003|
|Authors||K Stewart, M Buda, J Wong-Leung, L Fu, C Jagadish, A Stiff-Roberts, and P Bhattacharya|
|Journal||Journal of Applied Physics|
|Pagination||5283 - 5289|
Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.
|Short Title||Journal of Applied Physics|