Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

TitleInfluence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
Publication TypeJournal Article
Year of Publication2003
AuthorsK Stewart, M Buda, J Wong-Leung, L Fu, C Jagadish, A Stiff-Roberts, and P Bhattacharya
JournalJournal of Applied Physics
Volume94
Issue8
Start Page5283
Pagination5283 - 5289
Date Published10/2003
Abstract

Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector (QDIP) was studied. Temperatures in the range of 600-800°C for 60 s, typical of atomic interdiffusion were used. The devices exhibited large dark currents after rapid thermal annealing.

DOI10.1063/1.1609634
Short TitleJournal of Applied Physics