|Title||Intersubband absorption in annealed InAs/GaAs quantum dots: A case for polarization-sensitive infrared detection|
|Publication Type||Journal Article|
|Year of Publication||2003|
|Authors||S Chakrabarti, P Bhattacharya, AD Stiff-Roberts, YY Lin, J Singh, Y Lei, and N Browning|
|Journal||Journal of Physics D: Applied Physics|
|Pagination||1794 - 1797|
We have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation in as-grown and annealed self-organized InAs/GaAs quantum dots. It is observed that with the increase of annealing time and temperature, the dots tend to flatten and behave more like quantum wells. As a result, their sensitivity to TE (in-plane)-polarized light decreases and that to TM (out-of-plane)-polarized light increases. The effect could be utilized for the realization of polarization-sensitive IR detectors.
|Short Title||Journal of Physics D: Applied Physics|