Intersubband absorption in annealed InAs/GaAs quantum dots: A case for polarization-sensitive infrared detection

TitleIntersubband absorption in annealed InAs/GaAs quantum dots: A case for polarization-sensitive infrared detection
Publication TypeJournal Article
Year of Publication2003
AuthorsS Chakrabarti, P Bhattacharya, AD Stiff-Roberts, YY Lin, J Singh, Y Lei, and N Browning
JournalJournal of Physics D: Applied Physics
Volume36
Issue15
Start Page1794
Pagination1794 - 1797
Date Published08/2003
Abstract

We have studied the characteristics of intersubband absorption of polarized infrared (IR) radiation in as-grown and annealed self-organized InAs/GaAs quantum dots. It is observed that with the increase of annealing time and temperature, the dots tend to flatten and behave more like quantum wells. As a result, their sensitivity to TE (in-plane)-polarized light decreases and that to TM (out-of-plane)-polarized light increases. The effect could be utilized for the realization of polarization-sensitive IR detectors.

DOI10.1088/0022-3727/36/15/308
Short TitleJournal of Physics D: Applied Physics