Low-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier

TitleLow-bias, high-temperature performance of a normal-incidence InAs/GaAs vertical quantum-dot infrared photodetector with a current-blocking barrier
Publication TypeJournal Article
Year of Publication2002
AuthorsAD Stiff-Roberts, S Krishna, P Bhattacharya, and S Kennerly
JournalJournal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society
Volume20
Issue3
Start Page1185
Pagination1185 - 1187
Date Published05/2002
Abstract

The properties of a low-bias and high-temperature InAs/GaAs vertical quantum-dot infrared photodetector (QDIP) with a single Al0.3Ga0.7As current-blocking barrier were investigated. This device demonstrated high peak detectivity and a high operating temperature for normal-incidence vertical QDIPs. High-temperature operations in QDIPs resulted from a large electron relaxation time from the excited states to the ground state in quantum dots, allowing excited carriers to escape from the dot and contribute to the photocurrent before relaxing back into the ground state. The low bias performance of the photodetector ensured its compatibility with commercially available silicon read-out circuits.

DOI10.1116/1.1461370
Short TitleJournal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society