Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices

TitleMechanisms of lateral ordering of InAs/GaAs quantum dot superlattices
Publication TypeJournal Article
Year of Publication2003
AuthorsW Chen, B Shin, RS Goldman, A Stiff, and PK Bhattacharya
JournalJournal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society
Volume21
Issue4
Start Page1920
Pagination1920 - 1923
Date Published07/2003
Abstract

The mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices were investigated. The lateral spacing between dot columns in a series of five-period dot superlattices annealed for various times, was determined by using cross-sectional scanning tunneling microscopy. It was found that the average column spacing increases as the annealing time was increased.

Short TitleJournal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures : Processing, Measurement, and Phenomena : an Official Journal of the American Vacuum Society