|Title||Quantum dot infrared detectors and sources|
|Publication Type||Journal Article|
|Year of Publication||2002|
|Authors||P Bhattacharya, AD Stiff-Roberts, S Krishna, and S Kennerly|
|Journal||International Journal of High Speed Electronics and Systems|
|Pagination||969 - 994|
InAs/GaAs quantum dot devices have the potential to be the leading technology for infrared detection and emission, which are necessary for many military and domestic applications. Quantum dot infrared photodetectors yield higher operating temperatures, lower dark currents, and more wavelength tunability. They also permit the detection of normal-incidence light. Quantum dot infrared sources are also expected to yield higher operating temperatures, in addition to lower threshold currents and higher modulation bandwidths. After a brief review of the history of infrared detection and emission, the optical and electrical characteristics of self-organized In(Ga)As/GaAs quantum dots grown by molecular beam epitaxy are discussed, followed by results for the quantum dot detectors and emitters that have been developed at the University of Michigan, Ann Arbor.
|Short Title||International Journal of High Speed Electronics and Systems|