Quantum dot infrared photodetector design based on double-barrier resonant tunnelling

TitleQuantum dot infrared photodetector design based on double-barrier resonant tunnelling
Publication TypeJournal Article
Year of Publication2004
AuthorsXH Su, S Chakrabarti, AD Stiff-Roberts, J Singh, and P Bhattacharya
JournalElectronics Letters
Volume40
Issue17
Start Page1082
Pagination1082 - 1083
Date Published08/2004
Abstract

A novel quantum dot infrared photodeteotor design, based on double-barrier resonant tunnelling, is proposed and demonstrated. Theoretical calculations predict significantly lower dark currents in this device, compared to conventional quantum dot photodetectors. This is borne out of experimental results.

DOI10.1049/el:20045206
Short TitleElectronics Letters