|Title||Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors|
|Publication Type||Journal Article|
|Year of Publication||2002|
|Authors||AD Stiff-Roberts, S Chakrabarti, S Pradhan, B Kochman, and P Bhattacharya|
|Journal||Applied Physics Letters|
|Pagination||3265 - 3267|
We demonstrate normal incidence infrared imaging with quantum dot infrared photodetectors using a raster-scan technique. The device heterostructure, containing multiple layers of InAs/GaAs self-organized quantum dots, were grown by molecular-beam epitaxy. Individual devices have been operated at temperatures as high as 150 K and, at 100 K, are characterized by λpeak=3. 72μm, Jdark=6×10-10A/cm2 for a bias of 0.1 V, and D*=2.94×109cmHz1/2/W at a bias of 0.2 V. Raster-scan images of heated objects and infrared light sources were obtained with a small (13×13) interconnected array of detectors (to increase the photocurrent) at 80 K. © 2002 American Institute of Physics.
|Short Title||Applied Physics Letters|